Vishay SiSS26LDN Type N-Channel MOSFET, 81.2 A, 60 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

£1,263.00

(exc. VAT)

£1,515.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.421£1,263.00

*price indicative

RS Stock No.:
188-4901
Mfr. Part No.:
SISS26LDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

81.2A

Maximum Drain Source Voltage Vds

60V

Series

SiSS26LDN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

31.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Width

3.3 mm

Standards/Approvals

No

Height

0.78mm

Automotive Standard

No

N-Channel 60 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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