Vishay N-Channel MOSFET, 55.5 A, 80 V, 8-Pin PowerPAK 1212-8S SISS30LDN-T1-GE3

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Subtotal (1 pack of 10 units)*

£9.39

(exc. VAT)

£11.27

(inc. VAT)

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Temporarily out of stock
  • Shipping from 11 March 2026
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Units
Per unit
Per Pack*
10 - 90£0.939£9.39
100 - 240£0.892£8.92
250 - 490£0.677£6.77
500 - 990£0.61£6.10
1000 +£0.516£5.16

*price indicative

Packaging Options:
RS Stock No.:
188-5051
Mfr. Part No.:
SISS30LDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

55.5 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Length

3.3mm

Width

3.3mm

Typical Gate Charge @ Vgs

32.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.1V

Minimum Operating Temperature

-55 °C

Height

0.78mm

N-Channel 80 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM

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