Vishay N-Channel MOSFET, 12.3 A, 250 V, 8-Pin PowerPAK 1212-8S SiSS92DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

£1,341.00

(exc. VAT)

£1,608.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.447£1,341.00

*price indicative

RS Stock No.:
188-4908
Mfr. Part No.:
SiSS92DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12.3 A

Maximum Drain Source Voltage

250 V

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

65.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

10.4 nC @ 10 V

Width

3.3mm

Length

3.3mm

Maximum Operating Temperature

+150 °C

Height

0.78mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

N-Channel 250 V (D-S) MOSFET.

TrenchFET® with ThunderFET technology optimizes balance of RDS(on), Qg, Qsw, and Qoss
Leadership RDS(on) and RDS-Coss FOM

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