Vishay SiSS92DN Type N-Channel MOSFET, 12.3 A, 250 V Enhancement, 8-Pin PowerPAK 1212 SiSS92DN-T1-GE3
- RS Stock No.:
- 188-4960
- Distrelec Article No.:
- 304-32-538
- Mfr. Part No.:
- SiSS92DN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
£8.34
(exc. VAT)
£10.01
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 26 April 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.834 | £8.34 |
| 100 - 240 | £0.819 | £8.19 |
| 250 - 490 | £0.709 | £7.09 |
| 500 - 990 | £0.542 | £5.42 |
| 1000 + | £0.442 | £4.42 |
*price indicative
- RS Stock No.:
- 188-4960
- Distrelec Article No.:
- 304-32-538
- Mfr. Part No.:
- SiSS92DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.3A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | SiSS92DN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 65.8W | |
| Typical Gate Charge Qg @ Vgs | 10.4nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.78mm | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.3A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series SiSS92DN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 65.8W | ||
Typical Gate Charge Qg @ Vgs 10.4nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.78mm | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Automotive Standard No | ||
N-Channel 250 V (D-S) MOSFET.
TrenchFET® with ThunderFET technology optimizes balance of RDS(on), Qg, Qsw, and Qoss
Leadership RDS(on) and RDS-Coss FOM
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