Vishay N-Channel MOSFET, 12.3 A, 250 V, 8-Pin PowerPAK 1212-8S SiSS92DN-T1-GE3

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Subtotal (1 pack of 10 units)*

£8.00

(exc. VAT)

£9.60

(inc. VAT)

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  • Shipping from 13 August 2026
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Units
Per unit
Per Pack*
10 - 90£0.80£8.00
100 - 240£0.786£7.86
250 - 490£0.68£6.80
500 - 990£0.52£5.20
1000 +£0.424£4.24

*price indicative

Packaging Options:
RS Stock No.:
188-4960
Mfr. Part No.:
SiSS92DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12.3 A

Maximum Drain Source Voltage

250 V

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

65.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

10.4 nC @ 10 V

Width

3.3mm

Length

3.3mm

Forward Diode Voltage

1.2V

Height

0.78mm

Minimum Operating Temperature

-55 °C

N-Channel 250 V (D-S) MOSFET.

TrenchFET® with ThunderFET technology optimizes balance of RDS(on), Qg, Qsw, and Qoss
Leadership RDS(on) and RDS-Coss FOM

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