Vishay N-Channel MOSFET, 12.3 A, 250 V, 8-Pin PowerPAK 1212-8S SiSS92DN-T1-GE3

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Subtotal (1 pack of 10 units)*

£7.92

(exc. VAT)

£9.50

(inc. VAT)

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  • Shipping from 23 July 2026
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Units
Per unit
Per Pack*
10 - 90£0.792£7.92
100 - 240£0.778£7.78
250 - 490£0.673£6.73
500 - 990£0.515£5.15
1000 +£0.42£4.20

*price indicative

Packaging Options:
RS Stock No.:
188-4960
Mfr. Part No.:
SiSS92DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12.3 A

Maximum Drain Source Voltage

250 V

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

65.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

10.4 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

3.3mm

Length

3.3mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

0.78mm

N-Channel 250 V (D-S) MOSFET.

TrenchFET® with ThunderFET technology optimizes balance of RDS(on), Qg, Qsw, and Qoss
Leadership RDS(on) and RDS-Coss FOM

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