N-Channel MOSFET, 12.3 A, 250 V, 8-Pin PowerPAK 1212-8S Vishay SiSS92DN-T1-GE3

RS Stock No.:: 188-4960
Mfr. Part No.:: SiSS92DN-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 12.3 A, 250 V, 8-Pin PowerPAK 1212-8S Vishay SiSS92DN-T1-GE3

Available to back order for despatch 27/03/2025

Price Each (In a Pack of 10)

£0.752

(exc. VAT)

£0.902

(inc. VAT)

Units	Per unit	Per Pack*
10 - 90	£0.752	£7.52
100 - 240	£0.738	£7.38
250 - 490	£0.639	£6.39
500 - 990	£0.489	£4.89
1000 +	£0.399	£3.99

*price indicative

RS Stock No.:: 188-4960
Mfr. Part No.:: SiSS92DN-T1-GE3
Brand:: Vishay

Datasheet SiSS92DN-T1-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	12.3 A
Maximum Drain Source Voltage	250 V
Package Type	PowerPAK 1212-8S
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	65.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	10.4 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	3.3mm
Width	3.3mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C
Height	0.78mm

N-Channel MOSFET, 12.3 A, 250 V, 8-Pin PowerPAK 1212-8S Vishay SiSS92DN-T1-GE3

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