N-Channel MOSFET, 81.2 A, 60 V, 8-Pin PowerPAK 1212-8S Vishay SISS26LDN-T1-GE3

RS Stock No.:: 188-5033
Mfr. Part No.:: SISS26LDN-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 81.2 A, 60 V, 8-Pin PowerPAK 1212-8S Vishay SISS26LDN-T1-GE3

Available to back order for despatch 18/11/2024

Price Each (In a Pack of 10)

£0.816

(exc. VAT)

£0.979

(inc. VAT)

Units	Per unit	Per Pack*
10 +	£0.816	£8.16

*price indicative

RS Stock No.:: 188-5033
Mfr. Part No.:: SISS26LDN-T1-GE3
Brand:: Vishay

Datasheet SISS26LDN-T1-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	81.2 A
Maximum Drain Source Voltage	60 V
Package Type	PowerPAK 1212-8S
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	6.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	57 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Width	3.3mm
Number of Elements per Chip	1
Length	3.3mm
Typical Gate Charge @ Vgs	31.5 nC @ 10 V
Maximum Operating Temperature	+150 °C
Height	0.78mm
Forward Diode Voltage	1.1V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 81.2 A, 60 V, 8-Pin PowerPAK 1212-8S Vishay SISS26LDN-T1-GE3

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