Vishay N-Channel MOSFET, 81.2 A, 60 V, 8-Pin PowerPAK 1212-8S SISS26LDN-T1-GE3

Subtotal (1 pack of 10 units)*

£8.67

(exc. VAT)

£10.40

(inc. VAT)

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Per unit
Per Pack*
10 +£0.867£8.67

*price indicative

Packaging Options:
RS Stock No.:
188-5033
Mfr. Part No.:
SISS26LDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

81.2 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.3mm

Length

3.3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

31.5 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

0.78mm

Forward Diode Voltage

1.1V

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