Vishay N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8 SIS862ADN-T1-GE3

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Subtotal (1 reel of 3000 units)*

£669.00

(exc. VAT)

£804.00

(inc. VAT)

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3000 +£0.223£669.00

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RS Stock No.:
188-4889
Mfr. Part No.:
SIS862ADN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

3.15mm

Number of Elements per Chip

1

Width

3.15mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

19.8 nC @ 10 V

Forward Diode Voltage

1.1V

Minimum Operating Temperature

-55 °C

Height

1.07mm

N-Channel 60 V (D-S) MOSFET

TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM

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