Vishay N-Channel MOSFET, 181.8 A, 30 V, 8-Pin PowerPAK 1212-8S SISS60DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

£1,464.00

(exc. VAT)

£1,758.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.488£1,464.00

*price indicative

RS Stock No.:
188-4904
Mfr. Part No.:
SISS60DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

181.8 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.01 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

65.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Width

3.3mm

Length

3.3mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

57 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.78mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.68V

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