Vishay N-Channel MOSFET, 181.8 A, 30 V, 8-Pin PowerPAK 1212-8S SISS60DN-T1-GE3

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Subtotal (1 pack of 10 units)*

£10.01

(exc. VAT)

£12.01

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90£1.001£10.01
100 - 240£0.901£9.01
250 - 490£0.83£8.30
500 - 990£0.782£7.82
1000 +£0.651£6.51

*price indicative

Packaging Options:
RS Stock No.:
188-5094
Mfr. Part No.:
SISS60DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

181.8 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.01 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

65.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Width

3.3mm

Length

3.3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

57 nC @ 10 V

Forward Diode Voltage

0.68V

Height

0.78mm

Minimum Operating Temperature

-55 °C

N-Channel 30 V (D-S) MOSFET with Schottky Diode.

TrenchFET® Gen IV power MOSFET
SKYFET® with monolithic Schottky diode
Optimized RDS x Qg and RDS x Qgd FOM enable higher efficiency for high frequency switching

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