Vishay SiSS60DN Type N-Channel MOSFET, 181.8 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS60DN-T1-GE3

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Subtotal (1 pack of 10 units)*

£10.01

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£12.01

(inc. VAT)

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Per unit
Per Pack*
10 - 90£1.001£10.01
100 - 240£0.901£9.01
250 - 490£0.83£8.30
500 - 990£0.782£7.82
1000 +£0.651£6.51

*price indicative

Packaging Options:
RS Stock No.:
188-5094
Mfr. Part No.:
SISS60DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

181.8A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

SiSS60DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.01mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.68V

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

65.8W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

57nC

Maximum Operating Temperature

150°C

Length

3.3mm

Width

3.3 mm

Standards/Approvals

No

Height

0.78mm

Automotive Standard

No

Distrelec Product Id

304-32-536

N-Channel 30 V (D-S) MOSFET with Schottky Diode.

TrenchFET® Gen IV power MOSFET

SKYFET® with monolithic Schottky diode

Optimized RDS x Qg and RDS x Qgd FOM enable higher efficiency for high frequency switching

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