N-Channel MOSFET, 181.8 A, 30 V, 8-Pin PowerPAK 1212-8S Vishay SISS60DN-T1-GE3

RS Stock No.:: 188-5094
Mfr. Part No.:: SISS60DN-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 181.8 A, 30 V, 8-Pin PowerPAK 1212-8S Vishay SISS60DN-T1-GE3

Available to back order for despatch 05/12/2024

Price Each (In a Pack of 10)

£0.946

(exc. VAT)

£1.135

(inc. VAT)

Units	Per unit	Per Pack*
10 - 90	£0.946	£9.46
100 - 240	£0.851	£8.51
250 - 490	£0.785	£7.85
500 - 990	£0.738	£7.38
1000 +	£0.615	£6.15

*price indicative

RS Stock No.:: 188-5094
Mfr. Part No.:: SISS60DN-T1-GE3
Brand:: Vishay

Datasheet SISS60DN-T1-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	181.8 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK 1212-8S
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	2.01 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	65.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +16 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	3.3mm
Typical Gate Charge @ Vgs	57 nC @ 10 V
Length	3.3mm
Height	0.78mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	0.68V

N-Channel MOSFET, 181.8 A, 30 V, 8-Pin PowerPAK 1212-8S Vishay SISS60DN-T1-GE3

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