Vishay SiS862ADN Type N-Channel MOSFET, 52 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SIS862ADN-T1-GE3

Subtotal (1 pack of 25 units)*

£5.675

(exc. VAT)

£6.80

(inc. VAT)

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  • Final 2,900 unit(s), ready to ship
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25 +£0.227£5.68

*price indicative

Packaging Options:
RS Stock No.:
188-4951
Distrelec Article No.:
304-38-850
Mfr. Part No.:
SIS862ADN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

60V

Series

SiS862ADN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

39W

Typical Gate Charge Qg @ Vgs

19.8nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.07mm

Length

3.15mm

Automotive Standard

No

N-Channel 60 V (D-S) MOSFET

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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