Vishay SiS862ADN Type N-Channel MOSFET, 52 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SIS862ADN-T1-GE3

Bulk discount available

Subtotal (1 pack of 25 units)*

£17.275

(exc. VAT)

£20.725

(inc. VAT)

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Last RS stock
  • Final 8,900 unit(s), ready to ship
Units
Per unit
Per Pack*
25 - 100£0.691£17.28
125 - 225£0.623£15.58
250 - 600£0.588£14.70
625 - 1225£0.449£11.23
1250 +£0.387£9.68

*price indicative

Packaging Options:
RS Stock No.:
188-4951
Mfr. Part No.:
SIS862ADN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

60V

Series

SiS862ADN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.8nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

39W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

3.15 mm

Length

3.15mm

Standards/Approvals

No

Height

1.07mm

Automotive Standard

No

Distrelec Product Id

304-38-850

N-Channel 60 V (D-S) MOSFET

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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