Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 60 V, 7-Pin MG-WDSON-2 BSB028N06NN3GXUMA1
- RS Stock No.:
- 178-7487
- Mfr. Part No.:
- BSB028N06NN3GXUMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£5,315.00
(exc. VAT)
£6,380.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 27 February 2026
Units | Per unit | Per Reel* |
---|---|---|
5000 + | £1.063 | £5,315.00 |
*price indicative
- RS Stock No.:
- 178-7487
- Mfr. Part No.:
- BSB028N06NN3GXUMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 90 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | MG-WDSON-2 | |
Series | OptiMOS™ 3 | |
Mounting Type | Surface Mount | |
Pin Count | 7 | |
Maximum Drain Source Resistance | 2.8 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 78 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 108 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Width | 5.05mm | |
Length | 6.35mm | |
Height | 0.53mm | |
Minimum Operating Temperature | -40 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type MG-WDSON-2 | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 2.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 78 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 108 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 5.05mm | ||
Length 6.35mm | ||
Height 0.53mm | ||
Minimum Operating Temperature -40 °C | ||
Forward Diode Voltage 1.2V | ||
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
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