onsemi NVD5C464N N-Channel MOSFET, 59 A, 40 V, 3-Pin DPAK NVD5C464NT4G

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

£29.875

(exc. VAT)

£35.85

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 06 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 75£1.195£29.88
100 - 225£1.03£25.75
250 +£0.893£22.33

*price indicative

Packaging Options:
RS Stock No.:
172-3367
Mfr. Part No.:
NVD5C464NT4G
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

40 V

Series

NVD5C464N

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

20 nC @ 10 V

Length

6.73mm

Width

6.22mm

Height

2.25mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 259 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)
Lower switching loss
Excellent body diode performance (low Qrr, robust body diode)
Higher system reliability in LLC and Phase shift full bridge circuit
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 23 mΩ

Related links