Infineon CoolSiC Silicon N-Channel MOSFET, 59 A, 650 V, 4-Pin TO-247-4 IMZA65R027M1HXKSA1

Save 11% when you buy 90 units

Subtotal (1 tube of 30 units)*

£312.66

(exc. VAT)

£375.18

(inc. VAT)

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  • 90 unit(s) ready to ship
  • Plus 999,999,900 unit(s) shipping from 09 April 2026
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Units
Per unit
Per Tube*
30 - 30£10.422£312.66
60 - 60£9.901£297.03
90 +£9.275£278.25

*price indicative

RS Stock No.:
232-0400
Mfr. Part No.:
IMZA65R027M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247-4

Series

CoolSiC

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.034 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package. The 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Its suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency. MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.

Low capacitances
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard driver

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