Infineon CoolSiC Type N-Channel MOSFET, 59 A, 650 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 232-0400
- Mfr. Part No.:
- IMZA65R027M1HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£312.66
(exc. VAT)
£375.18
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 90 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £10.422 | £312.66 |
| 60 - 60 | £9.901 | £297.03 |
| 90 + | £9.275 | £278.25 |
*price indicative
- RS Stock No.:
- 232-0400
- Mfr. Part No.:
- IMZA65R027M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 34mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 34mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package. The 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Its suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency. MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.
Low capacitances
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard driver
Related links
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