Name: Infineon CoolSiC Silicon N-Channel MOSFET, 28 A, 650 V, 4-Pin TO-247-4 IMZA65R072M1HXKSA1
Brand: Infineon
SKU: 232-0411
Price: 4.49 GBP
Availability: OutOfStock

The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package. The CoolSiC MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.

Low capacitances
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard drivers

Units	Per unit	Per Tube*
30 - 30	£3.74	£112.20
60 - 120	£3.553	£106.59
150 +	£3.329	£99.87

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	28 A
	Maximum Drain Source Voltage	650 V
	Package Type	TO-247-4
	Series	CoolSiC
	Mounting Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance	0.094 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5.7V
	Transistor Material	Silicon
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 28 A
	Maximum Drain Source Voltage 650 V
	Package Type TO-247-4
	Series CoolSiC
	Mounting Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance 0.094 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5.7V
	Transistor Material Silicon
	Number of Elements per Chip 1

Infineon CoolSiC Silicon N-Channel MOSFET, 28 A, 650 V, 4-Pin TO-247-4 IMZA65R072M1HXKSA1

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