Infineon CoolSiC Silicon N-Channel MOSFET, 50 A, 650 V, 4-Pin TO-247-4 IMZA65R039M1HXKSA1
- RS Stock No.:
- 232-0404
- Mfr. Part No.:
- IMZA65R039M1HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£181.62
(exc. VAT)
£217.95
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 120 unit(s) shipping from 27 October 2025
- Plus 999,999,870 unit(s) shipping from 04 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £6.054 | £181.62 |
| 60 - 60 | £5.751 | £172.53 |
| 90 + | £5.388 | £161.64 |
*price indicative
- RS Stock No.:
- 232-0404
- Mfr. Part No.:
- IMZA65R039M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolSiC | |
| Package Type | TO-247-4 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.05 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.7V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolSiC | ||
Package Type TO-247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.05 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.7V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package. The CoolSiC MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.
Low capacitances
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard drivers
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard drivers
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