- RS Stock No.:
- 232-0401
- Mfr. Part No.:
- IMZA65R027M1HXKSA1
- Brand:
- Infineon
177 In stock - FREE next working day delivery available
Price Each
£16.72
(exc. VAT)
£20.06
(inc. VAT)
Units | Per unit |
1 - 4 | £16.72 |
5 - 9 | £15.88 |
10 - 24 | £15.55 |
25 - 49 | £14.55 |
50 + | £13.54 |
- RS Stock No.:
- 232-0401
- Mfr. Part No.:
- IMZA65R027M1HXKSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package. The 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Its suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency. MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.
Low capacitances
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard driver
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard driver
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 59 A |
Maximum Drain Source Voltage | 650 V |
Series | CoolSiC |
Package Type | TO-247-4 |
Mounting Type | Through Hole |
Pin Count | 4 |
Maximum Drain Source Resistance | 0.034 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5.7V |
Number of Elements per Chip | 1 |
Transistor Material | Silicon |
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