Infineon CoolSiC Silicon N-Channel MOSFET, 59 A, 650 V, 4-Pin TO-247-4 IMZA65R027M1HXKSA1
- RS Stock No.:
- 232-0401
- Mfr. Part No.:
- IMZA65R027M1HXKSA1
- Brand:
- Infineon
Save 18% when you buy 50 units
Subtotal (1 unit)*
£11.60
(exc. VAT)
£13.92
(inc. VAT)
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In Stock
- 106 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 4 | £11.60 |
| 5 - 9 | £11.02 |
| 10 - 24 | £10.79 |
| 25 - 49 | £10.09 |
| 50 + | £9.40 |
*price indicative
- RS Stock No.:
- 232-0401
- Mfr. Part No.:
- IMZA65R027M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 59 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolSiC | |
| Package Type | TO-247-4 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.034 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.7V | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 59 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolSiC | ||
Package Type TO-247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.034 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.7V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package. The 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Its suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency. MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.
Low capacitances
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard driver
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard driver
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