onsemi NVD5C464N N-Channel MOSFET, 59 A, 40 V, 3-Pin DPAK NVD5C464NT4G
- RS Stock No.:
- 172-3318
- Mfr. Part No.:
- NVD5C464NT4G
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£1,630.00
(exc. VAT)
£1,955.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 06 February 2026
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.652 | £1,630.00 |
*price indicative
- RS Stock No.:
- 172-3318
- Mfr. Part No.:
- NVD5C464NT4G
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 59 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | DPAK (TO-252) | |
Series | NVD5C464N | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 5.8 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 40 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Width | 6.22mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
Length | 6.73mm | |
Number of Elements per Chip | 1 | |
Minimum Operating Temperature | -55 °C | |
Height | 2.25mm | |
Automotive Standard | AEC-Q101 | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 59 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Series NVD5C464N | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 2.25mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.2V | ||
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 259 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)
Lower switching loss
Excellent body diode performance (low Qrr, robust body diode)
Higher system reliability in LLC and Phase shift full bridge circuit
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 23 mΩ
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