onsemi NVD5C464N N-Channel MOSFET, 59 A, 40 V, 3-Pin DPAK NVD5C464NT4G

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Subtotal (1 reel of 2500 units)*

£1,630.00

(exc. VAT)

£1,955.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.652£1,630.00

*price indicative

RS Stock No.:
172-3318
Mfr. Part No.:
NVD5C464NT4G
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

40 V

Series

NVD5C464N

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V

Width

6.22mm

Length

6.73mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

2.25mm

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 259 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)
Lower switching loss
Excellent body diode performance (low Qrr, robust body diode)
Higher system reliability in LLC and Phase shift full bridge circuit
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 23 mΩ

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