Infineon OptiMOS™ 5 N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON BSC040N08NS5ATMA1
- RS Stock No.:
- 171-1969
- Mfr. Part No.:
- BSC040N08NS5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£13.40
(exc. VAT)
£16.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 3,440 unit(s) shipping from 08 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.34 | £13.40 |
| 50 - 90 | £1.273 | £12.73 |
| 100 - 240 | £1.146 | £11.46 |
| 250 - 490 | £1.03 | £10.30 |
| 500 + | £0.98 | £9.80 |
*price indicative
- RS Stock No.:
- 171-1969
- Mfr. Part No.:
- BSC040N08NS5ATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | TDSON | |
| Series | OptiMOS™ 5 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 104 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Width | 6.35mm | |
| Typical Gate Charge @ Vgs | 43 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 5.49mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.1mm | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type TDSON | ||
Series OptiMOS™ 5 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 104 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Width 6.35mm | ||
Typical Gate Charge @ Vgs 43 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 5.49mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1.1mm | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
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