Infineon OptiMOS™ 5 N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON BSC040N08NS5ATMA1
- RS Stock No.:
- 171-1969
- Mfr. Part No.:
- BSC040N08NS5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£13.40
(exc. VAT)
£16.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 3,440 unit(s) shipping from 27 October 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.34 | £13.40 |
| 50 - 90 | £1.273 | £12.73 |
| 100 - 240 | £1.146 | £11.46 |
| 250 - 490 | £1.03 | £10.30 |
| 500 + | £0.98 | £9.80 |
*price indicative
- RS Stock No.:
- 171-1969
- Mfr. Part No.:
- BSC040N08NS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 80 V | |
| Series | OptiMOS™ 5 | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 104 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Length | 5.49mm | |
| Width | 6.35mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 43 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.1V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 80 V | ||
Series OptiMOS™ 5 | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 104 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Length 5.49mm | ||
Width 6.35mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 43 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
The Infineon BSC040N08NS5 OptiMOS 5 80 V power MOSFET, especially designed for synchronous rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter.
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
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