Infineon OptiMOS™ 5 N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON BSC030N08NS5ATMA1
- RS Stock No.:
- 170-2311
- Mfr. Part No.:
- BSC030N08NS5ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£3,865.00
(exc. VAT)
£4,640.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | £0.773 | £3,865.00 |
*price indicative
- RS Stock No.:
- 170-2311
- Mfr. Part No.:
- BSC030N08NS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 80 V | |
| Series | OptiMOS™ 5 | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 139 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 61 nC @ 10 V | |
| Length | 5.49mm | |
| Width | 6.35mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| Forward Diode Voltage | 1.1V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 80 V | ||
Series OptiMOS™ 5 | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 139 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 61 nC @ 10 V | ||
Length 5.49mm | ||
Width 6.35mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
Forward Diode Voltage 1.1V | ||
The Infineon BSC030N08NS5 is optiMOS 5 80 V power MOSFET, especially designed for synchronous rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44 %
Ideal for high switching frequency
Output capacitance reduction of up to 44 %
Related links
- Infineon OptiMOS™ N-Channel MOSFET 80 V, 8-Pin TDSON BSC030N08NS5ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 8-Pin TDSON BSC047N08NS3GATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin TDSON BSC040N08NS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin TDSON BSC040N10NS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin TDSON BSC070N10NS5ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 8-Pin TDSON BSC340N08NS3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 30 V, 8-Pin TDSON BSC020N03LSGATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin TDSON BSC035N10NS5ATMA1