Infineon OptiMOS™ N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC011N03LSIATMA1
- RS Stock No.:
- 178-7496
- Mfr. Part No.:
- BSC011N03LSIATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£2,530.00
(exc. VAT)
£3,035.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 10,000 unit(s) ready to ship
- Plus 999,985,000 unit(s) shipping from 27 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | £0.506 | £2,530.00 |
*price indicative
- RS Stock No.:
- 178-7496
- Mfr. Part No.:
- BSC011N03LSIATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | OptiMOS™ | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 96 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.1mm | |
| Width | 5.35mm | |
| Typical Gate Charge @ Vgs | 34 nC @ 4.5 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.1mm | |
| Forward Diode Voltage | 0.56V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS™ | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 96 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 6.1mm | ||
Width 5.35mm | ||
Typical Gate Charge @ Vgs 34 nC @ 4.5 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 1.1mm | ||
Forward Diode Voltage 0.56V | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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