Infineon OptiMOS™ N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC011N03LSATMA1
- RS Stock No.:
- 906-4280
- Mfr. Part No.:
- BSC011N03LSATMA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£6.84
(exc. VAT)
£8.21
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 7,740 unit(s) ready to ship
- Plus 999,992,250 unit(s) shipping from 30 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | £0.684 | £6.84 |
*price indicative
- RS Stock No.:
- 906-4280
- Mfr. Part No.:
- BSC011N03LSATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | OptiMOS™ | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 96 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5.35mm | |
| Number of Elements per Chip | 1 | |
| Length | 6.1mm | |
| Typical Gate Charge @ Vgs | 36 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| Forward Diode Voltage | 1V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS™ | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 96 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.35mm | ||
Number of Elements per Chip 1 | ||
Length 6.1mm | ||
Typical Gate Charge @ Vgs 36 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
Forward Diode Voltage 1V | ||
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