Infineon OptiMOS™ N-Channel MOSFET, 100 A, 30 V, 8-Pin SuperSO8 5 x 6 BSC034N03LSGATMA1
- RS Stock No.:
- 215-2458
- Mfr. Part No.:
- BSC034N03LSGATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£1,345.00
(exc. VAT)
£1,615.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 10,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | £0.269 | £1,345.00 |
*price indicative
- RS Stock No.:
- 215-2458
- Mfr. Part No.:
- BSC034N03LSGATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | OptiMOS™ | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0051 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SuperSO8 5 x 6 | ||
Series OptiMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0051 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOS™3 Power-MOSFET series has 30V maximum drain source voltage with SuperSO8 5x6 package type. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life. Available in half bridge configuration (power stage 5x6).
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel
Logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Superior thermal resistance
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Superior thermal resistance
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