N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 Infineon BSC009NE2LS5ATMA1

RS Stock No.:: 133-6576
Mfr. Part No.:: BSC009NE2LS5ATMA1
Brand:: Infineon

N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 Infineon BSC009NE2LS5ATMA1

Subtotal (1 reel of 5000 units)**

£2,335.00

(exc. VAT)

£2,800.00

(inc. VAT)

10000 In stock - FREE next working day delivery available*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over £50.00

Units	Per unit	Per Reel**
5000 +	£0.467	£2,335.00

**price indicative

RS Stock No.:: 133-6576
Mfr. Part No.:: BSC009NE2LS5ATMA1
Brand:: Infineon

Infineon OptiMOS™5 Power MOSFETs

Infineon OptiMOS™ 5 Series MOSFET, 223A Maximum Continuous Drain Current, 74W Maximum Power Dissipation - BSC009NE2LS5ATMA1

This high-performance MOSFET is designed for power management applications, providing exceptional efficiency and reliability. Its optimised characteristics make it suitable for various automation, electronics, and electrical applications. The N-channel configuration and advanced design facilitate effective management of high current loads while maintaining low on-resistance, making it a preferred choice for modern circuitry.

Features & Benefits

• Supports high current applications with a maximum continuous drain current of 223A
• Very low on-resistance enhances energy efficiency during operation
• Capable of withstanding a maximum drain-source voltage of 25V
• Features a compact SuperSO8 package for efficient surface mounting
• Delivers effective thermal performance for heat dissipation
• 100% avalanche tested to ensure robust reliability

Applications

• Used in high-performance buck converters for efficient voltage regulation
• Suitable for power management in consumer electronics
• Implemented in automotive where compact design is crucial
• Utilised in renewable energy systems for effective power conversion

What is the optimal operating temperature range for installation?

The device operates effectively between -55°C and +150°C, allowing for versatility in various environmental conditions.

Can it be used for synchronous rectification applications?

Yes, the low RDS(on) ensures minimal conduction losses, making it suitable for synchronous rectification.

What handling precautions should be taken during installation?

Standard electrostatic discharge (ESD) precautions should be observed to prevent damage to the MOSFET.

How does the gate charge impact performance?

A typical gate charge of 43nC at 10V helps maintain quick switching speeds, enhancing overall efficiency.

Is this component RoHS compliant?

Yes, it features Pb-free lead plating and is RoHS compliant, aligning with modern environmental standards.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	100 A
	Maximum Drain Source Voltage	25 V
	Series	OptiMOS™ 5
	Package Type	SuperSO8 5 x 6
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	1.25 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	74 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	+16 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Width	6.35mm
	Maximum Operating Temperature	+150 °C
	Length	5.49mm
	Typical Gate Charge @ Vgs	43 nC @ 10 V
	Height	1.1mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 100 A
	Maximum Drain Source Voltage 25 V
	Series OptiMOS™ 5
	Package Type SuperSO8 5 x 6
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 1.25 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 74 W
	Transistor Configuration Single
	Maximum Gate Source Voltage +16 V
	Transistor Material Si
	Number of Elements per Chip 1
	Width 6.35mm
	Maximum Operating Temperature +150 °C
	Length 5.49mm
	Typical Gate Charge @ Vgs 43 nC @ 10 V
	Height 1.1mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1V

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