Infineon OptiMOS™ 5 N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5ATMA1

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£3,065.00

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£3,680.00

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RS Stock No.:
133-6576
Mfr. Part No.:
BSC009NE2LS5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Series

OptiMOS™ 5

Package Type

SuperSO8 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+16 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5.49mm

Width

6.35mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Number of Elements per Chip

1

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

COO (Country of Origin):
MY

Infineon OptiMOS™5 Power MOSFETs


Infineon OptiMOS™ 5 Series MOSFET, 223A Maximum Continuous Drain Current, 74W Maximum Power Dissipation - BSC009NE2LS5ATMA1


This high-performance MOSFET is designed for power management applications, providing exceptional efficiency and reliability. Its optimised characteristics make it suitable for various automation, electronics, and electrical applications. The N-channel configuration and advanced design facilitate effective management of high current loads while maintaining low on-resistance, making it a preferred choice for modern circuitry.

Features & Benefits


• Supports high current applications with a maximum continuous drain current of 223A
• Very low on-resistance enhances energy efficiency during operation
• Capable of withstanding a maximum drain-source voltage of 25V
• Features a compact SuperSO8 package for efficient surface mounting
• Delivers effective thermal performance for heat dissipation
• 100% avalanche tested to ensure robust reliability

Applications


• Used in high-performance buck converters for efficient voltage regulation
• Suitable for power management in consumer electronics
• Implemented in automotive where compact design is crucial
• Utilised in renewable energy systems for effective power conversion

What is the optimal operating temperature range for installation?


The device operates effectively between -55°C and +150°C, allowing for versatility in various environmental conditions.

Can it be used for synchronous rectification applications?


Yes, the low RDS(on) ensures minimal conduction losses, making it suitable for synchronous rectification.

What handling precautions should be taken during installation?


Standard electrostatic discharge (ESD) precautions should be observed to prevent damage to the MOSFET.

How does the gate charge impact performance?


A typical gate charge of 43nC at 10V helps maintain quick switching speeds, enhancing overall efficiency.

Is this component RoHS compliant?


Yes, it features Pb-free lead plating and is RoHS compliant, aligning with modern environmental standards.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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