MPN

Infineon OptiMOS Type N-Channel MOSFET, 47 A, 60 V Enhancement, 8-Pin SuperSO

RS Stock No.:: 215-2464
Mfr. Part No.:: BSC094N06LS5ATMA1
Brand:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 47 A, 60 V Enhancement, 8-Pin SuperSO

Subtotal (1 reel of 5000 units)*

£1,795.00

(exc. VAT)

£2,155.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 10,000 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Reel*
5000 +	£0.359	£1,795.00

*price indicative

RS Stock No.:: 215-2464
Mfr. Part No.:: BSC094N06LS5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SuperSO
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13.4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	36W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	9.4nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 60V
	Package Type SuperSO
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13.4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 36W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 9.4nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSC094N06LS5ATMA1

The Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figures of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(the)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Low R DS(on) in small package

Low gate charge

Lower output charge

Logic level compatibility