Infineon OptiMOS™ N-Channel MOSFET, 47 A, 60 V, 8-Pin SuperSO8 5 x 6 BSC094N06LS5ATMA1
- RS Stock No.:
- 215-2465
- Mfr. Part No.:
- BSC094N06LS5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£13.86
(exc. VAT)
£16.64
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 12,100 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.693 | £13.86 |
| 100 - 180 | £0.659 | £13.18 |
| 200 - 480 | £0.631 | £12.62 |
| 500 - 980 | £0.603 | £12.06 |
| 1000 + | £0.562 | £11.24 |
*price indicative
- RS Stock No.:
- 215-2465
- Mfr. Part No.:
- BSC094N06LS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 47 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | OptiMOS™ | |
| Package Type | SuperSO8 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0134 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 47 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS™ | ||
Package Type SuperSO8 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0134 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figures of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(the)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
Low R DS(on) in small package
Low gate charge
Lower output charge
Logic level compatibility
Low gate charge
Lower output charge
Logic level compatibility
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