Infineon CoolMOS™ N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-220 FP SPA20N60C3XKSA1

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£9.13

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£10.956

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2 - 8£4.565£9.13
10 - 18£4.335£8.67
20 - 48£3.905£7.81
50 - 98£3.515£7.03
100 +£3.335£6.67

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RS Stock No.:
171-1920
Mfr. Part No.:
SPA20N60C3XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20.7 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

34.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

87 nC @ 10 V

Length

10.65mm

Width

4.85mm

Minimum Operating Temperature

-55 °C

Height

16.15mm

Forward Diode Voltage

0

Typical Power Gain

0

RoHS Status: Exempt

Infineon MOSFET


The Infineon through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 190mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 20.7A. It has a maximum gate-source voltage of 20V and drain-source voltage of 600V. It has a maximum power dissipation of 71W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Ease of use
• Field proven CoolMOS quality
• High efficiency and power density
• High reliability
• Low gate charge (Qg)
• Low specific on state resistance
• Operating temperature ranges between -55°C and 150°C
• Outstanding cost to performance
• Very low energy storage in output capacitance (Eoss) at 400V

Applications


• Adapter
• PC power
• Server power supplies
• Telecommunication

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• JEDEC

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