Infineon CoolMOS™ N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-220 FP SPA20N60C3XKSA1

RS Stock No.:: 171-1920
Mfr. Part No.:: SPA20N60C3XKSA1
Brand:: Infineon

Infineon CoolMOS™ N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-220 FP SPA20N60C3XKSA1

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Subtotal (1 pack of 2 units)*

£9.13

(exc. VAT)

£10.956

(inc. VAT)

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In Stock

Plus 30 unit(s) shipping from 27 October 2025
Plus 28 unit(s) shipping from 27 October 2025
Plus 116 unit(s) shipping from 03 November 2025

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Units	Per unit	Per Pack*
2 - 8	£4.565	£9.13
10 - 18	£4.335	£8.67
20 - 48	£3.905	£7.81
50 - 98	£3.515	£7.03
100 +	£3.335	£6.67

*price indicative

RS Stock No.:: 171-1920
Mfr. Part No.:: SPA20N60C3XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	20.7 A
	Maximum Drain Source Voltage	650 V
	Package Type	TO-220 FP
	Series	CoolMOS™
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	190 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.9V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	34.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	30 V
	Number of Elements per Chip	1
	Length	10.65mm
	Width	4.85mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	87 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	0
	Typical Power Gain	0
	Height	16.15mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 20.7 A
	Maximum Drain Source Voltage 650 V
	Package Type TO-220 FP
	Series CoolMOS™
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 190 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.9V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 34.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage 30 V
	Number of Elements per Chip 1
	Length 10.65mm
	Width 4.85mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 87 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 0
	Typical Power Gain 0
	Height 16.15mm

RoHS Status: Exempt

Infineon MOSFET

The Infineon through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 190mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 20.7A. It has a maximum gate-source voltage of 20V and drain-source voltage of 600V. It has a maximum power dissipation of 71W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of use
• Field proven CoolMOS quality
• High efficiency and power density
• High reliability
• Low gate charge (Qg)
• Low specific on state resistance
• Operating temperature ranges between -55°C and 150°C
• Outstanding cost to performance
• Very low energy storage in output capacitance (Eoss) at 400V

Applications

• Adapter
• PC power
• Server power supplies
• Telecommunication

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• JEDEC