Infineon CoolMOS™ N-Channel MOSFET, 20.7 A, 600 V, 3-Pin TO-220 FP SPA20N60C3XKSA1
- RS Stock No.:
- 170-2267
- Mfr. Part No.:
- SPA20N60C3XKSA1
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£131.45
(exc. VAT)
£157.75
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 100 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £2.629 | £131.45 |
*price indicative
- RS Stock No.:
- 170-2267
- Mfr. Part No.:
- SPA20N60C3XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20.7 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | CoolMOS™ | |
| Package Type | TO-220 FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 34.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 30 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.65mm | |
| Typical Gate Charge @ Vgs | 87 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.85mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.15mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20.7 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS™ | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 34.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 30 V | ||
Number of Elements per Chip 1 | ||
Length 10.65mm | ||
Typical Gate Charge @ Vgs 87 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4.85mm | ||
Minimum Operating Temperature -55 °C | ||
Height 16.15mm | ||
RoHS Status: Exempt
Infineon MOSFET
The Infineon through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 190mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 20.7A. It has a maximum gate-source voltage of 20V and drain-source voltage of 600V. It has a maximum power dissipation of 71W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Ease of use
• Field proven CoolMOS quality
• High efficiency and power density
• High reliability
• Low gate charge (Qg)
• Low specific on state resistance
• Operating temperature ranges between -55°C and 150°C
• Outstanding cost to performance
• Very low energy storage in output capacitance (Eoss) at 400V
• Field proven CoolMOS quality
• High efficiency and power density
• High reliability
• Low gate charge (Qg)
• Low specific on state resistance
• Operating temperature ranges between -55°C and 150°C
• Outstanding cost to performance
• Very low energy storage in output capacitance (Eoss) at 400V
Applications
• Adapter
• PC power
• Server power supplies
• Telecommunication
• PC power
• Server power supplies
• Telecommunication
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• JEDEC
• BS EN 61340-5-1:2007
• JEDEC
Related links
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