The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Summary of Features:
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Halogen free
Benefits:
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
Target Applications:
Synchronous rectification for AC-DC SMPS
Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
Isolated DC-DC converters (telecom and datacom systems
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Uninterruptable power supplies (UPS)

Units	Per unit	Per Pack*
2 - 8	£4.42	£8.84
10 - 18	£4.20	£8.40
20 - 48	£3.67	£7.34
50 - 98	£3.40	£6.80
100 +	£3.135	£6.27

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	100 A
	Maximum Drain Source Voltage	150 V
	Package Type	TO-220
	Series	OptiMOS™
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	7.7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	300 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	20 V
	Typical Gate Charge @ Vgs	70 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Width	4.57mm
	Length	10.36mm
	Height	11.17mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 100 A
	Maximum Drain Source Voltage 150 V
	Package Type TO-220
	Series OptiMOS™
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 7.7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 300 W
	Transistor Configuration Single
	Maximum Gate Source Voltage 20 V
	Typical Gate Charge @ Vgs 70 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Width 4.57mm
	Length 10.36mm
	Height 11.17mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V

Infineon OptiMOS™ N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 IPP075N15N3GXKSA1

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