Infineon CoolMOS™ P6 N-Channel MOSFET, 37.9 A, 650 V, 3-Pin TO-220 IPP60R099P6XKSA1

RS Stock No.:: 130-0924
Mfr. Part No.:: IPP60R099P6XKSA1
Brand:: Infineon

Infineon CoolMOS™ P6 N-Channel MOSFET, 37.9 A, 650 V, 3-Pin TO-220 IPP60R099P6XKSA1

Subtotal (1 unit)*

£2.64

(exc. VAT)

£3.17

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

457 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 +	£2.64

*price indicative

RS Stock No.:: 130-0924
Mfr. Part No.:: IPP60R099P6XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	37.9 A
	Maximum Drain Source Voltage	650 V
	Package Type	TO-220
	Series	CoolMOS™ P6
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	99 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4.5V
	Minimum Gate Threshold Voltage	3.5V
	Maximum Power Dissipation	278 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Width	4.57mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	70 nC @ 10 V
	Length	10.36mm
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	15.95mm
	Forward Diode Voltage	0.9V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 37.9 A
	Maximum Drain Source Voltage 650 V
	Package Type TO-220
	Series CoolMOS™ P6
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 99 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4.5V
	Minimum Gate Threshold Voltage 3.5V
	Maximum Power Dissipation 278 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Width 4.57mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 70 nC @ 10 V
	Length 10.36mm
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 15.95mm
	Forward Diode Voltage 0.9V

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOS^™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

Infineon CoolMOS™ P6 Series MOSFET, 37.9A Maximum Continuous Drain Current, 278W Maximum Power Dissipation - IPP60R099P6XKSA1

This MOSFET is tailored for high-performance applications in need of efficient power management. With a maximum continuous drain current of 37.9A and a drain-source voltage rating of 650V, it excels in automation and electronic sectors. Its enhancement mode N-channel configuration allows for effective switching capabilities, making it a preferred option for professionals in the electrical and mechanical industries.

Features & Benefits

• Low RDS(on) of 99mΩ improves switching efficiency
• Can dissipate up to 278W for enhanced durability
• Functions well under high temperatures of up to +150°C
• ESD protection above 2kV ensures dependable operation
• Suitable for both hard and soft switching applications
• Packaged in TO-220 for flexible mounting options

Applications

• Used in PFC stages for efficient power conversion
• Applicable in hard-switching PWM stages to boost performance
• Ideal for resonant switching stages in various electronic products
• Utilised in adapters and power supplies for electronic devices
• Effective in industrial automation systems demanding high power

What is the suitable gate-source voltage range for operation?

The appropriate gate-source voltage range for operation is -30V to +30V, ensuring safe and effective switching.

How does the low RDS(on) value benefit power efficiency?

The low resistance enhances power efficiency by reducing conduction losses, leading to decreased heat generation during operation.

What is the maximum power dissipation capability during usage?

The maximum power dissipation capacity during operation is 278W, allowing robust performance under challenging conditions.

Is there any special consideration for using this component in parallel configurations?

When using in parallel, it is advisable to use ferrite beads on the gate or separate totem poles to optimise performance and minimise oscillations.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.