Nexperia PMV20XNE N-Channel MOSFET, 7.2 A, 30 V, 3-Pin SOT-23 PMV20XNER
- RS Stock No.:
- 170-5372
- Mfr. Part No.:
- PMV20XNER
- Brand:
- Nexperia
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£5.85
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£7.025
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In Stock
- 200 unit(s) ready to ship
- Plus 5,025 unit(s) shipping from 09 October 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.234 | £5.85 |
| 250 - 600 | £0.104 | £2.60 |
| 625 - 1225 | £0.102 | £2.55 |
| 1250 - 2475 | £0.099 | £2.48 |
| 2500 + | £0.097 | £2.43 |
*price indicative
- RS Stock No.:
- 170-5372
- Mfr. Part No.:
- PMV20XNER
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7.2 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TO-236 | |
| Series | PMV20XNE | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 38 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.9V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 6.94 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 12 V | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 12.4 nC @ 4.5 V | |
| Width | 1.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TO-236 | ||
Series PMV20XNE | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 38 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.9V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 6.94 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 12 V | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 12.4 nC @ 4.5 V | ||
Width 1.4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
- COO (Country of Origin):
- CN
Robust interfacing between asynchronous and synchronous systems. Flip-flops are basic storage elements in digital electronics. By only allowing the output to change on an edge transition, flip-flops provide a robust interface between asynchronous and synchronous systems. With a choice of either positive or negative edge triggered options they provide added design flexibility.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Enhanced power dissipation capability of 1200 mW
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Target applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
Low threshold voltage
Enhanced power dissipation capability of 1200 mW
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Target applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
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