onsemi NDT451AN N-Channel MOSFET, 7.2 A, 30 V, 3-Pin SOT-223 NDT451AN
- RS Stock No.:
- 178-7632
- Mfr. Part No.:
- NDT451AN
- Brand:
- onsemi
Subtotal (1 reel of 4000 units)*
£1,436.00
(exc. VAT)
£1,724.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 30 January 2026
Units | Per unit | Per Reel* |
---|---|---|
4000 + | £0.359 | £1,436.00 |
*price indicative
- RS Stock No.:
- 178-7632
- Mfr. Part No.:
- NDT451AN
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 7.2 A | |
Maximum Drain Source Voltage | 30 V | |
Series | NDT451AN | |
Package Type | SOT-223 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.035 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 3 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
Width | 3.7mm | |
Length | 6.7mm | |
Minimum Operating Temperature | -65 °C | |
Height | 1.7mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Series NDT451AN | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.035 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Width 3.7mm | ||
Length 6.7mm | ||
Minimum Operating Temperature -65 °C | ||
Height 1.7mm | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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