onsemi NDT451AN N-Channel MOSFET, 7.2 A, 30 V Enhancement, 4-Pin SOT-223 NDT451AN
- RS Stock No.:
- 761-3978
- Mfr. Part No.:
- NDT451AN
- Brand:
- onsemi
Get a bulk buy discount
Add 50 more to save 13%
View bulk pricing optionsSubtotal (1 pack of 5 units)*
£4.82
(exc. VAT)
£5.79
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 3,230 unit(s) shipping from 09 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 5 - 45 | £0.964 | £4.82 | - |
| 50 - 95 | £0.832 | £4.16 | 13% |
| 100 - 495 | £0.72 | £3.60 | 25% |
| 500 - 995 | £0.634 | £3.17 | 34% |
| 1000 + | £0.576 | £2.88 | 40% |
*price indicative
- RS Stock No.:
- 761-3978
- Mfr. Part No.:
- NDT451AN
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-223 | |
| Series | NDT451AN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 3W | |
| Minimum Operating Temperature | -65°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Height | 1.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-223 | ||
Series NDT451AN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 3W | ||
Minimum Operating Temperature -65°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Height 1.7mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi NDT451AN N-Channel MOSFET 30 V Enhancement, 4-Pin SOT-223 NDT451AN
- onsemi QFET N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- onsemi QFET N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-223
- onsemi N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 NVF3055L108T1G
- onsemi NTF3055L108 N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 NTF3055L108T1G
- onsemi PowerTrench N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 FDT86106LZ
- onsemi NDT N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 NDT3055L
- onsemi QFET N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 FQT7N10LTF