onsemi N-Channel MOSFET, 7.2 A, 30 V, 3-Pin SOT-223 NDT451AN

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Subtotal (1 pack of 5 units)*

£4.82

(exc. VAT)

£5.785

(inc. VAT)

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5 - 45£0.964£4.82
50 - 95£0.832£4.16
100 - 495£0.72£3.60
500 - 995£0.634£3.17
1000 +£0.576£2.88

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Packaging Options:
RS Stock No.:
761-3978
Mfr. Part No.:
NDT451AN
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.7mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.7mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-65 °C

Height

1.7mm

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

The ON Semiconductor NDT451AN is power SOT N channel enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

High power and current handling capability in a widely used surface mount package


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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