onsemi N-Channel MOSFET, 7.2 A, 30 V, 3-Pin SOT-223 NDT451AN
- RS Stock No.:
- 761-3978
- Mfr. Part No.:
- NDT451AN
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£4.82
(exc. VAT)
£5.785
(inc. VAT)
FREE delivery for orders over £50.00
- 3,320 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £0.964 | £4.82 |
50 - 95 | £0.832 | £4.16 |
100 - 495 | £0.72 | £3.60 |
500 - 995 | £0.634 | £3.17 |
1000 + | £0.576 | £2.88 |
*price indicative
- RS Stock No.:
- 761-3978
- Mfr. Part No.:
- NDT451AN
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 7.2 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOT-223 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 90 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 3 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 3.7mm | |
Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 6.7mm | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -65 °C | |
Height | 1.7mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.7mm | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 6.7mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -65 °C | ||
Height 1.7mm | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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