Nexperia Type N-Channel MOSFET, 1 A, 100 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

£228.00

(exc. VAT)

£273.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.076£228.00

*price indicative

RS Stock No.:
152-7155
Mfr. Part No.:
PMV280ENEAR
Brand:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

892mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

4.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

5W

Maximum Operating Temperature

150°C

Width

1.4 mm

Height

1mm

Standards/Approvals

No

Length

3mm

Automotive Standard

AEC-Q101

N-channel MOSFETs 75 V - 200 V, You have now entered one of the world's foremost standard MOS portfolios, Looking for high-reliability MOSFETs in the 75 V to 200 V range that simplify design-in? Our devices are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA). For example, our LFPAK power MOSFET range boasts ultra-low RDSon, high-speed switching and voltage ratings up to 200 V.

100 V N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

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