Nexperia N-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 PMV28UNEAR

Subtotal (1 pack of 25 units)*

£5.025

(exc. VAT)

£6.025

(inc. VAT)

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25 +£0.201£5.03

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Packaging Options:
RS Stock No.:
151-3171
Mfr. Part No.:
PMV28UNEAR
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

3.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

8 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

6.2 nC @ 10 V

Length

3mm

Maximum Operating Temperature

+150 °C

Width

1.4mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

1mm

Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.

AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating

20 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified

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