Nexperia N-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 PMV100ENEAR

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Subtotal (1 pack of 25 units)*

£3.45

(exc. VAT)

£4.15

(inc. VAT)

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  • 23,225 unit(s) shipping from 13 October 2025
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Units
Per unit
Per Pack*
25 +£0.138£3.45

*price indicative

Packaging Options:
RS Stock No.:
153-0784
Mfr. Part No.:
PMV100ENEAR
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

118 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

3.6 nC @ 10 V

Length

3mm

Width

1.4mm

Number of Elements per Chip

1

Automotive Standard

AEC-Q101

Height

1mm

Minimum Operating Temperature

-55 °C

30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits

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