Nexperia N-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-23 PMV280ENEAR

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Subtotal (1 pack of 25 units)*

£4.75

(exc. VAT)

£5.75

(inc. VAT)

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Temporarily out of stock
  • 100 unit(s) shipping from 31 October 2025
  • Plus 3,000 unit(s) shipping from 17 December 2025
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Units
Per unit
Per Pack*
25 - 225£0.19£4.75
250 - 600£0.105£2.63
625 - 1225£0.102£2.55
1250 - 2475£0.099£2.48
2500 +£0.097£2.43

*price indicative

Packaging Options:
RS Stock No.:
153-0676
Mfr. Part No.:
PMV280ENEAR
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

892 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

3mm

Width

1.4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

N-channel MOSFETs 75 V - 200 V, You have now entered one of the world's foremost standard MOS portfolios, Looking for high-reliability MOSFETs in the 75 V to 200 V range that simplify design-in? Our devices are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA). For example, our LFPAK power MOSFET range boasts ultra-low RDSon, high-speed switching and voltage ratings up to 200 V.

100 V N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits

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