Nexperia N-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-23 PMV280ENEAR
- RS Stock No.:
- 153-0676
- Mfr. Part No.:
- PMV280ENEAR
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 25 units)*
£4.75
(exc. VAT)
£5.75
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 100 unit(s) shipping from 31 October 2025
- Plus 3,000 unit(s) shipping from 17 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.19 | £4.75 |
| 250 - 600 | £0.105 | £2.63 |
| 625 - 1225 | £0.102 | £2.55 |
| 1250 - 2475 | £0.099 | £2.48 |
| 2500 + | £0.097 | £2.43 |
*price indicative
- RS Stock No.:
- 153-0676
- Mfr. Part No.:
- PMV280ENEAR
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 892 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.7V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Length | 3mm | |
| Width | 1.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 4.5 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 1 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 892 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.7V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Length 3mm | ||
Width 1.4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 4.5 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
N-channel MOSFETs 75 V - 200 V, You have now entered one of the world's foremost standard MOS portfolios, Looking for high-reliability MOSFETs in the 75 V to 200 V range that simplify design-in? Our devices are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA). For example, our LFPAK power MOSFET range boasts ultra-low RDSon, high-speed switching and voltage ratings up to 200 V.
100 V N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
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