Nexperia N-Channel MOSFET, 270 mA, 60 V, 3-Pin SOT-23 NX7002BKR

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£9.50

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£11.50

(inc. VAT)

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250 - 250£0.038£9.50
500 - 1000£0.036£9.00
1250 - 2250£0.023£5.75
2500 +£0.022£5.50

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RS Stock No.:
151-2761
Mfr. Part No.:
NX7002BKR
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

270 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

1670 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Typical Gate Charge @ Vgs

1 nC @ 10 V

Width

1.4mm

Maximum Operating Temperature

+150 °C

Length

3mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1mm

COO (Country of Origin):
CN
Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).

60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM

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