Microchip DN2530 Silicon N-Channel MOSFET Transistor, 170 mA, 300 V Depletion, 3-Pin TO-92 DN2530N3-G
- RS Stock No.:
- 170-4346
- Mfr. Part No.:
- DN2530N3-G
- Brand:
- Microchip
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 170-4346
- Mfr. Part No.:
- DN2530N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 170 mA | |
| Maximum Drain Source Voltage | 300 V | |
| Package Type | TO-92 | |
| Series | DN2530 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 12 Ω | |
| Channel Mode | Depletion | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 170 mA | ||
Maximum Drain Source Voltage 300 V | ||
Package Type TO-92 | ||
Series DN2530 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12 Ω | ||
Channel Mode Depletion | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
- COO (Country of Origin):
- TH
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Typical Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
The Microchip DN2530 N-channel depletion mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. It has Drain-to-source and Drain-to-gate voltage of 300V and static drain-to-source on-state resistance of 25Ω.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Lead (Pb)-free
3-lead TO-92 package
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Lead (Pb)-free
3-lead TO-92 package
MOSFET Transistors, Microchip
Related links
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