Infineon OptiMOS™ 5 N-Channel MOSFET, 40 A, 100 V, 8-Pin TSDSON BSZ097N10NS5ATMA1

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£7.66

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£9.19

(inc. VAT)

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Per Pack*
10 - 40£0.766£7.66
50 - 90£0.62£6.20
100 - 240£0.582£5.82
250 - 490£0.536£5.36
500 +£0.498£4.98

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Packaging Options:
RS Stock No.:
170-2342
Mfr. Part No.:
BSZ097N10NS5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 5

Package Type

TSDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

3.4mm

Length

3.4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

22 nC @ 10 V

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.1mm

Minimum Operating Temperature

-55 °C

OptiMOS™ 5 100V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest R DS(on)

Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter

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