Infineon OptiMOS™ 3 Silicon N-Channel MOSFET, 40 A, 100 V, 8-Pin PQFN 3 x 3 BSZ150N10LS3GATMA1

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Subtotal (1 pack of 10 units)*

£9.55

(exc. VAT)

£11.46

(inc. VAT)

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Per Pack*
10 - 40£0.955£9.55
50 - 90£0.908£9.08
100 - 240£0.868£8.68
250 - 490£0.831£8.31
500 +£0.774£7.74

*price indicative

Packaging Options:
RS Stock No.:
222-4634
Mfr. Part No.:
BSZ150N10LS3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN 3 x 3

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.015 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating

RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23

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