Infineon OptiMOS™ 3 Silicon N-Channel MOSFET, 40 A, 100 V, 8-Pin PQFN 3 x 3 BSZ150N10LS3GATMA1

Subtotal (1 reel of 5000 units)*

£2,010.00

(exc. VAT)

£2,410.00

(inc. VAT)

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RS Stock No.:
222-4633
Mfr. Part No.:
BSZ150N10LS3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 3

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.015 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating

RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23

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