Infineon OptiMOS™ 5 N-Channel MOSFET, 40 A, 100 V, 8-Pin TSDSON BSZ097N10NS5ATMA1
- RS Stock No.:
- 170-2300
- Mfr. Part No.:
- BSZ097N10NS5ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£2,410.00
(exc. VAT)
£2,890.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 16 February 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | £0.482 | £2,410.00 |
*price indicative
- RS Stock No.:
- 170-2300
- Mfr. Part No.:
- BSZ097N10NS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TSDSON | |
| Series | OptiMOS™ 5 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 13 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 69 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Width | 3.4mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Length | 3.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TSDSON | ||
Series OptiMOS™ 5 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 13 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 69 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Width 3.4mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Length 3.4mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
OptiMOS™ 5 100V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest R DS(on)
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter
Related links
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