Infineon OptiMOS™ N-Channel MOSFET, 100 A, 25 V, 8-Pin TSDSON BSC009NE2LSATMA1
- RS Stock No.:
- 178-7504
- Mfr. Part No.:
- BSC009NE2LSATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£2,815.00
(exc. VAT)
£3,380.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 10,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | £0.563 | £2,815.00 |
*price indicative
- RS Stock No.:
- 178-7504
- Mfr. Part No.:
- BSC009NE2LSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 25 V | |
| Series | OptiMOS™ | |
| Package Type | TSDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 900 μΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 96 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 5.35mm | |
| Length | 6.1mm | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1V | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 25 V | ||
Series OptiMOS™ | ||
Package Type TSDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 900 μΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 96 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 72 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 5.35mm | ||
Length 6.1mm | ||
Transistor Material Si | ||
Forward Diode Voltage 1V | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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