N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD IXYS MMIX1T600N04T2
- RS Stock No.:
- 168-4791
- Mfr. Part No.:
- MMIX1T600N04T2
- Brand:
- IXYS
60 In stock - FREE next working day delivery available
Added
Price Each (In a Tube of 20)
£28.803
(exc. VAT)
£34.564
(inc. VAT)
| Units | Per unit | Per Tube* |
| 20 + | £28.803 | £576.06 |
| *price indicative | ||
- RS Stock No.:
- 168-4791
- Mfr. Part No.:
- MMIX1T600N04T2
- Brand:
- IXYS
Legislation and Compliance
- COO (Country of Origin):
- DE
Product Details
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 600 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | SMPD |
| Series | GigaMOS, HiperFET |
| Mounting Type | Surface Mount |
| Pin Count | 24 |
| Maximum Drain Source Resistance | 1.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 830 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 23.25mm |
| Length | 25.25mm |
| Typical Gate Charge @ Vgs | 590 nC @ 10 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 5.7mm |
| Forward Diode Voltage | 1.2V |
- RS Stock No.:
- 168-4791
- Mfr. Part No.:
- MMIX1T600N04T2
- Brand:
- IXYS
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