IXYS HiperFET, Polar3 N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-3PN IXFQ28N60P3

Stock information currently inaccessible
RS Stock No.:
802-4451
Mfr. Part No.:
IXFQ28N60P3
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Package Type

TO-3PN

Series

HiperFET, Polar3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

260 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

695 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

50 nC @ 10 V

Length

15.8mm

Width

4.9mm

Height

20.3mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series


A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy