Name: IXYS HiperFET, Q3-Class N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-268 IXFT18N100Q3
Brand: IXYS
SKU: 168-4712
Price: 13.04 GBP
Availability: Discontinued

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	IXYS
	Channel Type	N
	Maximum Continuous Drain Current	18 A
	Maximum Drain Source Voltage	1000 V
	Package Type	TO-268
	Series	HiperFET, Q3-Class
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	660 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	6.5V
	Maximum Power Dissipation	830 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Number of Elements per Chip	1
	Width	14mm
	Maximum Operating Temperature	+150 °C
	Length	16.05mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	90 nC @ 10 V
	Height	5.1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand IXYS
	Channel Type N
	Maximum Continuous Drain Current 18 A
	Maximum Drain Source Voltage 1000 V
	Package Type TO-268
	Series HiperFET, Q3-Class
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 660 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 6.5V
	Maximum Power Dissipation 830 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Number of Elements per Chip 1
	Width 14mm
	Maximum Operating Temperature +150 °C
	Length 16.05mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 90 nC @ 10 V
	Height 5.1mm
	Minimum Operating Temperature -55 °C

IXYS HiperFET, Q3-Class N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-268 IXFT18N100Q3

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

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