IXYS HiperFET, Q3-Class N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227 IXFN44N80Q3

View all MOSFETs

Subtotal (1 unit)*

£41.98

(exc. VAT)

£50.38

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 21 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 +£41.98

*price indicative

RS Stock No.:
804-7571
Distrelec Article No.:
302-53-374
Mfr. Part No.:
IXFN44N80Q3
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

800 V

Series

HiperFET, Q3-Class

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

780 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Width

25.07mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

185 nC @ 10 V

Length

38.23mm

Height

9.6mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links