IXYS Type N-Channel MOSFET, 63 A, 500 V Enhancement, 4-Pin SOT-227

View all MOSFETs

Subtotal (1 unit)*

£41.80

(exc. VAT)

£50.16

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 +£41.80

*price indicative

RS Stock No.:
804-7583
Distrelec Article No.:
302-53-379
Mfr. Part No.:
IXFN80N50Q3
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

500V

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

200nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

780W

Maximum Operating Temperature

150°C

Length

38.23mm

Width

25.07 mm

Height

9.6mm

Standards/Approvals

No

Distrelec Product Id

30253379

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links