IXYS HiperFET, Q3-Class N-Channel MOSFET, 82 A, 500 V, 4-Pin SOT-227 IXFN100N50Q3

View all MOSFETs

Subtotal (1 tube of 10 units)*

£354.39

(exc. VAT)

£425.27

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 09 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
10 +£35.439£354.39

*price indicative

RS Stock No.:
168-4752
Mfr. Part No.:
IXFN100N50Q3
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

82 A

Maximum Drain Source Voltage

500 V

Package Type

SOT-227

Series

HiperFET, Q3-Class

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

960 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

25.07mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

255 nC @ 10 V

Length

38.23mm

Height

9.6mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links