IXYS HiperFET, Q3-Class N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3
- RS Stock No.:
- 801-1386
- Distrelec Article No.:
- 302-53-319
- Mfr. Part No.:
- IXFH30N50Q3
- Brand:
- IXYS
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£10.70
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£12.84
(inc. VAT)
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In Stock
- 282 unit(s) ready to ship
- Plus 258 unit(s) shipping from 29 October 2025
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Units | Per unit |
|---|---|
| 1 - 5 | £10.70 |
| 6 - 14 | £9.83 |
| 15 + | £9.33 |
*price indicative
- RS Stock No.:
- 801-1386
- Distrelec Article No.:
- 302-53-319
- Mfr. Part No.:
- IXFH30N50Q3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | HiperFET, Q3-Class | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 200 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 6.5V | |
| Maximum Power Dissipation | 690 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5.3mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 62 nC @ 10 V | |
| Length | 16.26mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.26mm | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 500 V | ||
Series HiperFET, Q3-Class | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 6.5V | ||
Maximum Power Dissipation 690 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.3mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 62 nC @ 10 V | ||
Length 16.26mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 16.26mm | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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