IXYS HiperFET, Q-Class N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

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Subtotal (1 tube of 30 units)*

£234.54

(exc. VAT)

£281.46

(inc. VAT)

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Per Tube*
30 +£7.818£234.54

*price indicative

RS Stock No.:
920-0965
Mfr. Part No.:
IXFH30N50Q3
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

500 V

Series

HiperFET, Q-Class

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

690 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

16.26mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

62 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Height

16.26mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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